• DocumentCode
    2269200
  • Title

    Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs

  • Author

    Bork, I. ; Jungemann, Chr ; Meinerzhagen, B. ; Engl, W.L.

  • Author_Institution
    Inst. fur Thoer. Elektrotech., Aachen Univ., Germany
  • fYear
    1994
  • fDate
    5-6 Jun 1994
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    The modeling accuracy of the generalized hydrodynamic model for ultra-short MOSFETs with Leff=0.1 μm is examined using a consistent Monte Carlo model as reference. It is shown that with a proper modeling of heat flux the generalized hydrodynamic model is still sufficiently accurate even for such small devices
  • Keywords
    MOSFET; Monte Carlo methods; elemental semiconductors; impact ionisation; semiconductor device models; silicon; 0.1 micron; consistent Monte Carlo model; heat flux; hydrodynamic models; modeling accuracy; small devices; ultra-short Si MOSFETs; Current density; Electrons; Electrostatics; FETs; Hydrodynamics; Impact ionization; MOSFETs; Monte Carlo methods; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    0-7803-1867-6
  • Type

    conf

  • DOI
    10.1109/NUPAD.1994.343490
  • Filename
    343490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2269200