Incorporating full band-structure effects in the spherical harmonics expansion of the Boltzmann transport equation

Author

Vecchi, M.C. ; Ventura, D. ; Gnudi, A. ; Baccarani, G.

Author_Institution

Bologna Univ., Italy

fYear

1994

fDate

5-6 Jun 1994

Firstpage

55

Lastpage

58

Abstract

Band-structure effects are incorporated in the framework of the Spherical-Harmonic Expansion (SHE) approximation of the Boltzmann Transport Equation (BTE) for electrons in silicon. The density of states (DOS) and the group velocity (GV) are modeled as energy-dependent functions obtained from the full-band system. Scattering parameters are tuned by fitting experimental and Monte Carlo data

Keywords

Boltzmann equation; Monte Carlo methods; S-parameters; band structure; electronic density of states; elemental semiconductors; harmonic analysis; impact ionisation; silicon; Boltzmann transport equation; Monte Carlo data; Si; density of states; energy-dependent functions; full band-structure effects; group velocity; scattering parameters; spherical harmonics expansion; Boltzmann equation; Electrons; Impact ionization; Monte Carlo methods; Nonlinear optics; Optical scattering; Phonons; Shape; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343492

Filename

343492