DocumentCode
2269348
Title
Combined asperity contact and fluid flow model for chemical-mechanical polishing
Author
Tat-Kwan Yu ; Yu, Chris ; Orlowski, Marius
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear
1994
fDate
5-6 Jun 1994
Firstpage
29
Lastpage
32
Abstract
This paper presents, for the first time, a physical model of chemical-mechanical polishing (CMP) that combine the effects of polishing pad roughness and slurry hydrodynamic pressure. Recently, the authors introduced a statistical asperity model to analyze contact of wafer and the polishing pad. This model is extended to include slurry flow hydrodynamics. Fluid film thickness between the wafer and pad is first estimated from measured pad roughness. Fluid pressure is then calculated from finite element simulation. The model is used to investigate parametric effects of pressure, platen velocity and pad roughness
Keywords
abrasion; finite element analysis; polishing; semiconductor process modelling; statistical analysis; asperity contact; chemical-mechanical polishing; finite element simulation; fluid film thickness; fluid flow model; fluid pressure; parametric effects; physical model; platen velocity; polishing pad roughness; slurry hydrodynamic pressure; statistical asperity model; Chemical products; Equations; Fluid flow; Hydrodynamics; Permeability; Planarization; Rough surfaces; Semiconductor device modeling; Slurries; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location
Honolulu, HI
Print_ISBN
0-7803-1867-6
Type
conf
DOI
10.1109/NUPAD.1994.343498
Filename
343498
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