• DocumentCode
    2269348
  • Title

    Combined asperity contact and fluid flow model for chemical-mechanical polishing

  • Author

    Tat-Kwan Yu ; Yu, Chris ; Orlowski, Marius

  • Author_Institution
    Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
  • fYear
    1994
  • fDate
    5-6 Jun 1994
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    This paper presents, for the first time, a physical model of chemical-mechanical polishing (CMP) that combine the effects of polishing pad roughness and slurry hydrodynamic pressure. Recently, the authors introduced a statistical asperity model to analyze contact of wafer and the polishing pad. This model is extended to include slurry flow hydrodynamics. Fluid film thickness between the wafer and pad is first estimated from measured pad roughness. Fluid pressure is then calculated from finite element simulation. The model is used to investigate parametric effects of pressure, platen velocity and pad roughness
  • Keywords
    abrasion; finite element analysis; polishing; semiconductor process modelling; statistical analysis; asperity contact; chemical-mechanical polishing; finite element simulation; fluid film thickness; fluid flow model; fluid pressure; parametric effects; physical model; platen velocity; polishing pad roughness; slurry hydrodynamic pressure; statistical asperity model; Chemical products; Equations; Fluid flow; Hydrodynamics; Permeability; Planarization; Rough surfaces; Semiconductor device modeling; Slurries; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    0-7803-1867-6
  • Type

    conf

  • DOI
    10.1109/NUPAD.1994.343498
  • Filename
    343498