Two-dimensional energy-dependent substrate current models for deep submicron MOSFETs

Author

Yeap, C.F. ; Hasnat, K. ; Agostinelli, V.M., Jr. ; Bordelon, T.J. ; Jallepalli, S. ; Wang, X.L. ; Maziar, C.M. ; Tasch, A.F.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1994

fDate

5-6 Jun 1994

Firstpage

15

Lastpage

18

Abstract

Substrate current model based on the post-processing 1-D hydrodynamic model attached to drift-diffusion simulators has proven to be efficient and accurate for predicting substrate current for contemporary submicron MOSFETs. However, as devices shrink into the deep submicron regime, the self-consistent 2-D HD model will be increasingly needed to predict not only the substrate current but also to accurately determine the location of hot-carrier generation in evaluating the reliability of competing device designs

Keywords

MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; deep submicron MOSFETs; deep submicron regime; drift-diffusion simulators; energy-dependent models; hot-carrier generation; post-processing 1-D hydrodynamic model; reliability; self-consistent 2D HD model; substrate current models; Charge carrier processes; Current measurement; Energy conservation; Equations; High definition video; Hydrodynamics; Impact ionization; MOS devices; MOSFETs; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343501

Filename

343501