• DocumentCode
    2269608
  • Title

    A 4-Bit Passive Phase Shifter for Automotive Radar Applications in 0.13 μm CMOS

  • Author

    Kim, Sang Young ; Rebeiz, Gabriel M.

  • Author_Institution
    ECE Dept., Univ. of California, San Diego, La Jolla, CA, USA
  • fYear
    2009
  • fDate
    11-14 Oct. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a 67-78 GHz 4-bit passive phase shifter using CMOS switches available in the 0.12 mum SiGe BiCMOS process (IBM 8HP). The phase shifter is based on a low-pass pi-network and CMOS passive transistors. The phase shifter achieves -19.2+/-3.7 dB of gain including pad loss at 77 GHz. The RMS phase error is less than 11.25deg and the RMS gain error is less than 2.5 dB over the 67 78 GHz range. The total chip size is 450 times 300 mum2 (0.135 mm2), excluding pads, and the chip consumes virtually no power. The measured P1dB is > +8 dBm at 77 GHz and the simulated IIP3 is > 22 dBm, making it possible to precede this design with a high gain LNA without loss of system linearity or input power handling.
  • Keywords
    automotive electronics; phase shifters; road vehicle radar; semiconductor switches; 4-bit passive phase shifter; CMOS passive transistor; CMOS switches; RMS gain error; RMS phase error; automotive radar application; complementary metal-oxide-semiconductor; frequency 67 GHz to 78 GHz; low noise amplifier; size 0.12 mum; Automotive engineering; BiCMOS integrated circuits; CMOS process; Gain; Germanium silicon alloys; Phase shifters; Power measurement; Radar applications; Silicon germanium; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
  • Conference_Location
    Greensboro, NC
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-5191-3
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/csics.2009.5315586
  • Filename
    5315586