The design of a 60 GHz low loss hybrid phase shifter with 360 degree phase shift

Author

Ke-Wu Han ; Hengrong Cui ; Xiao-Wei Sun ; Jian Zhang

Author_Institution

Key Lab. of Terahertz Solid-State Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

fYear

2014

fDate

24-26 Sept. 2014

Firstpage

551

Lastpage

554

Abstract

This paper presents a 60 GHz low loss phase shifter characterized by 360 degree phase shift and low variation of insertion loss using GaAs pHEMT process. The circuit contains a reflection type phase shifter (RTPS) and a switch line type phase shifter (SLTPS). A pair of Schottky diodes connected by a length of microstrip line is terminated to the through and coupled ports of Lange coupler as reflective variable loads. The optimum performance is attained when the electronic length is 75 um and the total finger width is 40 um after simulation using Agilent Advanced Design System. A one bit switch line type phase shifter (SLTPS) is employed as a 0/π phase shifter. The measured results show that this 60 GHz hybrid phase shifter can achieve 360 degree phase variation with insertion loss varying from 7.5~10.7 dB.

Keywords

HEMT circuits; III-V semiconductors; Schottky diodes; gallium arsenide; microstrip lines; millimetre wave phase shifters; Agilent Advanced Design System; GaAs; GaAs pHEMT process; Lange coupler; RTPS; SLTPS; Schottky diodes; frequency 60 GHz; hybrid phase shifter; loss 7.5 dB to 10.7 dB; low loss phase shifter; microstrip line; reflection type phase shifter; reflective variable loads; size 40 mum; size 75 mum; switch line type phase shifter; CMOS integrated circuits; Couplers; Fingers; Impedance; Insertion loss; Phase shifters; Schottky diodes; 360 degree; 60GHz; phase shifter; reflective variable load; switch line type;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Information Technologies (ISCIT), 2014 14th International Symposium on

Conference_Location

Incheon

Type

conf

DOI

10.1109/ISCIT.2014.7011975

Filename

7011975