V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology

Author

Godin, Jean ; Nodjiadjim, Virginie ; Riet, Muriel ; Berdaguer, Philippe ; Piotrowicz, Stéphane ; Jardel, Olivier ; Scavennec, André ; Nallatamby, Jean-Christophe ; Gaquière, Christophe ; Werquin, Matthieu

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2009

fDate

11-14 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get F_T~200 GHz and F_MAX>300 GHz, to suit microwave applications. Special attention has been paid to critical thermal behavior. Key devices have been modeled using a modified Gummel-Poon model. Based on these models, and a passive devices library, RF amplifiers have been designed to operate at 60 GHz, fabricated using the developed process, using 2-finger devices, and measured. 1-stage amplifier delivers 5.5 dB, and 2-device 2-stage amplifier achieves up to 10 dB gain.

Keywords

MMIC amplifiers; radiofrequency amplifiers; DHBT technology; Gummel-Poon model; RF MMIC; RF amplifier; V-band amplifier MMIC; microwave application; multifinger; passive device library; structure optimization; Fabrication; Fingers; Gain measurement; Geometry; Indium phosphide; Libraries; MMICs; Microwave devices; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Conference_Location

Greensboro, NC

ISSN

1550-8781

Print_ISBN

978-1-4244-5191-3

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/csics.2009.5315658

Filename

5315658