• DocumentCode
    2270116
  • Title

    A charge-injection method for Gilbert cell biasing

  • Author

    NacEachern, L.A. ; Manku, Tajinder

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • Volume
    1
  • fYear
    1998
  • fDate
    24-28 May 1998
  • Firstpage
    365
  • Abstract
    A CMOS Gilbert cell mixer biasing topology is presented. The new biasing technique offers several key advantages over the traditional biasing arrangement. First, the new topology allows the designer to easily adjust the bias current present in the Gilbert cell input transistors, while maintaining bias currents in other portions of the circuit. Second, the mixer linearity can be improved using this biasing method by accurate adjustment of the input MOSFET operating point. Third, the biasing method reduces the “voltage headroom” difficulties inherent to the Gilbert cell, which uses a stacked arrangement of transistors. The importance of these adjustments with regard to the mixer conversion gain and IP3 is examined
  • Keywords
    CMOS analogue integrated circuits; mixers (circuits); CMOS mixer; Gilbert cell biasing; Gilbert mixer; RF input MOSFET operating point; biasing topology; charge-injection method; conversion gain; mixer linearity; voltage headroom; Cellular networks; Circuit topology; Helium; MOSFET circuits; Radio frequency; Resistors; Satellite broadcasting; Switches; TV; Telephony;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
  • Conference_Location
    Waterloo, Ont.
  • ISSN
    0840-7789
  • Print_ISBN
    0-7803-4314-X
  • Type

    conf

  • DOI
    10.1109/CCECE.1998.682760
  • Filename
    682760