• DocumentCode
    2270237
  • Title

    L-band internally matched Si-MMIC low noise amplifier

  • Author

    Suematsu, N. ; Ono, M. ; Kubo, S. ; Sato, H. ; Iyama, Y. ; Ishida, Osamu

  • Author_Institution
    Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan
  • Volume
    3
  • fYear
    1996
  • fDate
    17-21 June 1996
  • Firstpage
    1225
  • Abstract
    A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 /spl mu/m Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.
  • Keywords
    BiCMOS analogue integrated circuits; MMIC amplifiers; elemental semiconductors; impedance matching; silicon; 0.8 micron; 1.9 GHz; 10 dB; 2 V; 2 mA; 2.7 dB; Bi-CMOS process; CPW internal matching circuits; L-band; Si; Si MMIC low noise amplifier; low resistive Si substrate; monolithic integration; Circuits; Coplanar waveguides; Frequency dependence; Inductors; L-band; Low-noise amplifiers; Noise figure; Noise measurement; Radio frequency; Spirals;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1996., IEEE MTT-S International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-3246-6
  • Type

    conf

  • DOI
    10.1109/MWSYM.1996.512157
  • Filename
    512157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2270237