High Linearity AlGaAs/InGaAs Pseudomorphic HEMT Driver Amplifier Using Tunable Field-Plate Voltage Technology

Author

Cheng, Chia-Shih ; Lin, Shao-Wei ; Fu, Jeffrey S. ; Chiu, Hsien-Chin

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2009

fDate

11-14 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

A high-linearity AlGaAs/InGaAs pseudomorphic HEMT RF driver amplifier was developed using a tunable field-plate (FP) bias voltage technology in this study. In order to improve the circuit linearity performance, an FP device was employed at the output stage to provide an additional mechanism to suppress the power of the second and third-order harmonics in a two stage 5.2 GHz driver amplifier. A standard Class AB driver amplifier without using FP technology was also implemented for comparison under the identical power consumption. The circuit with an FP device biased at V_FP= -4 V in the output stage demonstrated at least 2 dB improvement on the third-order intercept point at input (IIP₃) performance over the standard one within the useful power range in two tone measurement.

Keywords

high electron mobility transistors; radiofrequency amplifiers; AlGaAs-InGaAs; Class AB driver amplifier; circuit linearity performance; frequency 5.2 GHz; high electron mobility transistors; pseudomorphic HEMT RF driver amplifier; second-order harmonics; third-order harmonics; tunable field-plate bias voltage technology; voltage -4 V; Driver circuits; Indium gallium arsenide; Linearity; PHEMTs; Power amplifiers; Power system harmonics; Radio frequency; Radiofrequency amplifiers; Tunable circuits and devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Conference_Location

Greensboro, NC

ISSN

1550-8781

Print_ISBN

978-1-4244-5191-3

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/csics.2009.5315757

Filename

5315757