• DocumentCode
    2270965
  • Title

    Ultra Low Power 60 GHz ASK SiGe Receiver with 3-6 GBPS Capabilities

  • Author

    Shin, Woorim ; Uzunkol, Mehmet ; Rebeiz, Gabriel M.

  • Author_Institution
    Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA
  • fYear
    2009
  • fDate
    11-14 Oct. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents an ultra low power 60 GHz SiGe ASK receiver capable of 3-6 Gbps communications. The receiver is based on a 4-stage low-noise amplifier and an ASK detector, all in a 0.12 um SiGe transistor technology. The LNA and ASK detector were designed for wide bandwidth in order to result in a very high data rate. The LNA+Detector chip consumes 11 mW and is capable of 3-6 Gbps communications with a BER < 10-12 for an input power of -36 dBm. At an input power of -44 dBm, the system can maintain a 3 Gbps link with a BER <10-9. This translates to 3.3-1.6 pJ/bit for the LNA+Detector, and to our knowledge, is the state of the art. The chip was tested up to 105degC and maintained >3 Gbps with a BER <10-12 over the entire temperature range.
  • Keywords
    Ge-Si alloys; error statistics; radio receivers; transistors; ASK detector; ASK receiver; BER; bit rate 3 Gbit/s to 6 Gbit/s; frequency 60 GHz; input power; low noise amplifier; temperature range; transistor technology; ultra low power; wide bandwidth; Amplitude shift keying; Bit error rate; Detectors; Frequency; Germanium silicon alloys; Horn antennas; Noise measurement; Semiconductor device measurement; Silicon germanium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
  • Conference_Location
    Greensboro, NC
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-5191-3
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/csics.2009.5315799
  • Filename
    5315799