A new chip interconnection technic for ultra high-speed and millimeter-wave applications

Author

Hanke, G. ; Nohr, W.D.

Author_Institution

Deutsche Telekom, Darmstadt, Germany

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1611

Abstract

Nearly lossless and non-reflecting interconnections between semiconductor-chips and transmission lines working up to 50 GHz can be realized in a "Reverse Beam-Lead Technic" as well as low-impedance ground and power supply interconnections. The paper describes the required technology, compares TDR and S-parameter measurements of state-of-the-art technics and the new one, and gives some examples of high-speed circuits.

Keywords

S-parameters; beam-lead devices; integrated circuit interconnections; millimetre wave integrated circuits; time-domain reflectometry; very high speed integrated circuits; 50 GHz; Reverse Beam-Lead Technic; S-parameters; TDR; ground interconnections; lossless nonreflecting interconnections; millimeter-wave circuits; power supply interconnections; semiconductor chips; transmission lines; ultra high-speed circuits; Bonding; Integrated circuit interconnections; Lead; Microstrip; Millimeter wave technology; Power transmission lines; Propagation losses; Semiconductor films; Substrates; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512246

Filename

512246