Structural properties and electrical characteristics of high-k GdTiO3 gate dielectrics for InGaZnO thin-film transistors

Author

Ching-Hung Chen ; Jim-Long Her ; Tung-Ming Pan ; Fu-Chien Chiu ; Koyama, Koichi

Author_Institution

Chang Gung Univ., Taoyuan, Taiwan

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

1

Lastpage

2

Abstract

We investigated the structural properties and electrical characteristics of GdTiO₃ dielectrics for IGZO TFT devices. We used XRD, XPS, and AFM to examine the structural, compositional, and morphological features of the GdTiO₃ film, respectively. The IGZO TFT featuring a GdTiO₃ gate dielectric exhibited a large field-effect mobility of 32.3 cm²/V-s, a small threshold voltage of 0.14 V, a high Ion/Ioff current ratio of 4.2 × 10⁸, and a low subthreshold swing of 213 mV/decade.

Keywords

X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; gadolinium compounds; gallium compounds; high-k dielectric thin films; indium compounds; semiconductor-insulator boundaries; surface morphology; thin film transistors; zinc compounds; AFM; GdTiO₃; GdTiO₃ film; IGZO TFT devices; InGaZnO thin-film transistors; InGaZnO-GdTiO₃; Ion-Ioff current ratio; X-ray diffraction; X-ray photoelectron spectra; XPS; XRD; atomic force microscopy; compositional features; electrical characteristics; field-effect mobility; high-k GdTiO₃ gate dielectrics; morphological features; structural features; structural properties; subthreshold swing; threshold voltage; voltage 0.14 V; Dielectrics; Educational institutions; Logic gates; Thin film transistors; Threshold voltage; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference (IVESC), 2014 Tenth International

Conference_Location

St. Petersburg

Print_ISBN

978-1-4799-5770-5

Type

conf

DOI

10.1109/IVESC.2014.6891962

Filename

6891962