DocumentCode
227256
Title
Tunnel current in the presence of nanosized film at the cathode
Author
Davidovich, M.V. ; Bushuev, N.A. ; Yafarov, R.K.
Author_Institution
Saratov State Univ., Saratov, Russia
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
1
Lastpage
1
Abstract
We use the classic approach to get the quantum mechanical potential, and consider the field emission in a flat vacuum diode with size d and thin dielectric film with sufficient permittivity. Using the potential in the form of series of images we have calculated the forms of potential barriers at different film thicknesses and voltages at the anode. It can be explained by the fact that the film reduces the intensity of a field.
Keywords
cathodes; dielectric thin films; diodes; electron field emission; nanostructured materials; permittivity; vacuum microelectronics; cathode; field emission; flat vacuum diode; nanosized film; permittivity; quantum mechanical potential; thin dielectric film; tunnel current; Anodes; Cathodes; Dielectrics; Electric potential; Elementary particle vacuum; Permittivity; Quantum mechanics;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location
St. Petersburg
Print_ISBN
978-1-4799-5770-5
Type
conf
DOI
10.1109/IVESC.2014.6891967
Filename
6891967
Link To Document