DocumentCode
2272614
Title
DC and RF techniques for computing access resistances in microwave FET´s
Author
Reynoso-Hernandez, J.A. ; Rangel-Patino, F.E.
Author_Institution
Div. de Fisica Aplicada, CICESE, Ensenada, Mexico
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1711
Abstract
In order to estimate the access resistances of PHEMTs two different techniques based on I(V) and RF measurements were investigated. An improved cold-FET technique is presented. The main difference between the classical and the proposed cold-FET techniques lies on the open circuit condition in drain-source instead of short circuit condition (V/sub DS/=0 V). A good agreement is observed between the values of parasitic resistances computed from DC I(V) and RF measurements.
Keywords
electric resistance measurement; high electron mobility transistors; microwave field effect transistors; microwave measurement; DC measurement; I(V) measurement; PHEMT; RF measurement; access resistance; cold FET; microwave FET; open circuit; parasitic resistance; Circuits; Electrical resistance measurement; Equations; Microwave FETs; Microwave theory and techniques; PHEMTs; Radio frequency; Schottky diodes; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512271
Filename
512271
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