Circuit-level model for single-event burnout in N-channel power MOSFET´s

Author

Liu, Jinhong ; Schrimpf, R.D. ; Massengill, Lloyd ; Galloway, Kenneth F. ; Attia, J.

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

fYear

1999

fDate

1999

Firstpage

173

Lastpage

179

Abstract

Single Event Burnout (SEB) of power MOSFET´s is a catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device. In this paper, an SEB circuit model of the power MOSFET has been developed. The calibrations of model parameters are illustrated. The dependence of SEB sensitivity on various parameters is presented and compared with experimental results. The parasitic resistance and capacitance of the device as well as the circuit parameters contribute to the length of SEB pulse. Increasing the switching frequency of the power MOSFET may be a possible way to prevent SEB in applications

Keywords

ion beam effects; power MOSFET; semiconductor device models; N-channel power MOSFET; catastrophic failure; circuit model; heavy ion irradiation; parasitic capacitance; parasitic resistance; single event burnout; switching frequency; Breakdown voltage; Calibration; Doping; Electron mobility; Failure analysis; MOSFET circuits; Parasitic capacitance; Pulse circuits; Resistors; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

Conference_Location

Fontevraud

Print_ISBN

0-7803-5726-4

Type

conf

DOI

10.1109/RADECS.1999.858572

Filename

858572