Low-Frequency Noise Characteristics of ZnO Nanorods Schottky Barrier Photodetectors

Author

Tse-Pu Chen ; Sheng-Joue Young ; Shoou-Jinn Chang ; Chih-Hung Hsiao ; Liang-Wen Ji ; Yu-Jung Hsu ; San-Lein Wu

Author_Institution

Dept. of Electr. Eng., Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

13

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

2115

Lastpage

2119

Abstract

A Schottky barrier photodetector with ZnO nanorods is fabricated on a glass substrate and the I-V characteristics are investigated. The ZnO nanorods are synthesized by an aqueous method, which allowed the fabricated Schottky barrier photodetector to be more sensitive in the UV region. Under 370-nm illumination, the photocurrent of the ZnO nanorod Schottky barrier photodetector is 6.56 μA and the UV-to-visible ratio is 780.8 at -1V. In addition, the noise equivalent power and normalized detectivity (D*) of the photodetector are 6.74×10^-13 W and 3.29 ×10¹¹ cmHz^0.5W^-1 at -1V, respectively.

Keywords

II-VI semiconductors; Schottky barriers; nanorods; photodetectors; semiconductor device noise; zinc compounds; Schottky barrier photodetector; ZnO; aqueous method; current 6.56 muA; low frequency noise characteristics; wavelength 370 nm; Films; Noise; Photodetectors; Physics; Schottky barriers; Semiconductor device measurement; Zinc oxide; Low-frequency noise; Schottky barrier; ZnO; nanorod;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2013.2238228

Filename

6407675