Title :
Micro-irradiation experiments in MOS transistors using synchrotron radiation
Author :
Autran, J.-L. ; Masson, P. ; Freud, N. ; Raynaud, C. ; Riekel, C.
Author_Institution :
Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees de Lyon, Villeurbanne, France
Abstract :
Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements
Keywords :
MOSFET; X-ray effects; semiconductor device breakdown; MOS transistors; X-ray synchrotron radiation; charge pumping; current-voltage characteristics; micrometer resolution; photon emission; quasi-breakdown; spatially-resolved total-dose degradation; Charge measurement; Charge pumps; Current measurement; Degradation; Electric variables measurement; Electrodes; MOSFETs; Spatial resolution; Stimulated emission; Synchrotron radiation;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858591
