Title :
Effects induced by gamma radiation on the noise in junction field-effect transistors belonging to monolithic processes
Author :
Manfredi, P.F. ; Ratti, L. ; Re, V. ; Speziali, V.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
Abstract :
The effects of γ-rays on the noise characteristics of junction field-effect transistors belonging to three monolithic technologies have been investigated. A substantially different behavior of the radiation-induced noise in N and P-channel JFETs was observed. This results in interesting design considerations for low-noise circuits
Keywords :
gamma-ray effects; junction gate field effect transistors; monolithic integrated circuits; semiconductor device noise; JFET; gamma radiation; junction field-effect transistors; low-noise circuits; monolithic processes; noise characteristics; radiation-induced noise; Circuit noise; Degradation; Equations; FETs; Frequency; Gamma rays; JFETs; Laboratories; Low-frequency noise; MOSFET circuits;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858596
