Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs

Author

Raja, J. ; Kyungsoo Jang ; Cam Phu Thi Nguyen ; Balaji, N. ; Chatterjee, Saptarshi ; Junsin Yi

Author_Institution

Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

756

Lastpage

758

Abstract

Effect of short-channel induced instabilities in InSnZnO-based thin-film transistors (TFTs) caused by combination of the drain induced barrier lowering (DIBL) and parasitic resistance is reported. As the active channel length decreased below a critical value of around 8 μm, the draincurrent (2.81 μA) are abruptly increased and N-shaped behavior of the transconductance are observed due to the formation of additional current path in the channel. The magnitude of subgap density of states is also depended on the channel size. The higher value of parasitic resistance RSD (~42 kg) and DIBL coefficient (76.8 mV/V) in short-channel ITZO TFT devices are also discussed.

Keywords

electric resistance; indium compounds; thin film transistors; tin compounds; wide band gap semiconductors; zinc compounds; DIBL coefficient; InSnZnO; N-shaped behavior; active channel length; current 2.81 muA; drain-current; drain-induced barrier lowering; parasitic resistance induced instabilities; short-channel InSnZnO TFTs; short-channel induced instabilities; thin-film transistors; transconductance; Iron; Logic gates; Resistance; Thin film transistors; Transconductance; Voltage measurement; ITZO TFTs; Short-channel; drain induced barrier lowering; parasitic resistance; parasitic resistance.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2318754

Filename

6822543