DocumentCode
227429
Title
Statistical properties of single-electron pulse in semiconductor microchannel
Author
Panyutin, Eugeny A.
Author_Institution
Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
1
Lastpage
2
Abstract
Secondary-electron amplification of single-electron pulse in semiconductor microchannel is characterized by a number of statistical parameters, knowledge whereof is necessary for creating high-quality random signal generators. In this paper, variance and output electrons number distribution asymmetry were calculated using computer methods and the interdependence of the latter with the energy and angular distributions of secondary electrons parameters was determined.
Keywords
secondary electron emission; semiconductor materials; signal generators; angular distributions; energy distributions; output electrons number distribution asymmetry; random signal generators; secondary electron amplification; semiconductor microchannel; single electron pulse; statistical parameters; statistical properties; Anodes; Computational modeling; Computers; Electronic mail; Generators; Microchannels; Signal generators;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location
St. Petersburg
Print_ISBN
978-1-4799-5770-5
Type
conf
DOI
10.1109/IVESC.2014.6892054
Filename
6892054
Link To Document