DocumentCode
2274440
Title
Composite Dielectrics and Surfactants for Low Voltage Electrowetting Devices
Author
Raj, B. ; Smith, N.R. ; Christy, L. ; Dhindsa, M. ; Heikenfeld, J.
Author_Institution
Dept. of Electr. & Comput. Eng., Cincinnati Univ., Cincinnati, OH
fYear
2008
fDate
13-16 July 2008
Firstpage
187
Lastpage
190
Abstract
In this work electrowetting operation at <12 V has been achieved through implementation of composite dielectrics and surfactants. The composite dielectrics consist of A12O3 and Si3N4 covered by a thin film of hydrophobic Cytop fluoropolymer. These composite dielectrics exhibit higher capacitance and therefore lower voltage electrowetting operation. Atomic layer deposition of A12O3 and plasma-enhanced chemical vapor deposition of Si3N4 were chosen because they can be deposited at low temperature, are pin-hole free, and because they can be conformably coated on 3D surfaces. Surfactants were also explored to lower the water/oil interfacial surface tension and thereby further reduce the voltages required for electrowetting. These results are important for continued development of arrayed electrowetting optics for displays and beam steering applications.
Keywords
beam steering; composite materials; dielectric devices; dielectric thin films; plasma CVD; polymer films; surface tension; surfactants; thin film devices; wetting; arrayed electrowetting optics; atomic layer deposition; beam steering applications; composite dielectrics; hydrophobic Cytop fluoropolymer; low voltage electrowetting devices; plasma-enhanced chemical vapor deposition; surfactants; thin films; water-oil interfacial surface tension; Atomic layer deposition; Capacitance; Chemical vapor deposition; Dielectric devices; Dielectric thin films; Low voltage; Optical arrays; Plasma chemistry; Plasma temperature; Semiconductor thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Micro/Nano Symposium, 2008. UGIM 2008. 17th Biennial
Conference_Location
Louisville, KY
Print_ISBN
978-1-4244-2484-9
Electronic_ISBN
978-1-4244-2485-6
Type
conf
DOI
10.1109/UGIM.2008.55
Filename
4573233
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