Modeling of long wavelength quantum-dot lasers with dots-in-a-well structure

Author

Xiaodong Huang ; Stintz, A. ; Hua Li ; Cheng, J. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2002

fDate

24-24 May 2002

Abstract

Summary form only given. The zero-dimensional nature and three-dimensional confinement of QDs give rise to widely-spaced discrete states, resulting in carrier dynamics and lasing characteristics that differ significantly from double heterostructure or quantum well lasers. In this paper, we propose a rate equation model for the dots-in-a-well (DWELL) structure, and analyze the steady-state and transient behavior of the DWELL lasers in detail using the model.

Keywords

III-V semiconductors; indium compounds; laser theory; quantum dot lasers; semiconductor quantum dots; InAs; InAs DWELL structure quantum-dot lasers; carrier dynamics; dots-in-a-well structure; dynamic properties; lasing characteristics; long wavelength quantum-dot lasers; rate equation model; steady state behavior; three-dimensional confinement; transient behavior; widely-spaced discrete states; zero-dimensional nature; Absorption; Charge carrier processes; Equations; Laser modes; Laser theory; Quantum dot lasers; Quantum well lasers; Radiative recombination; Spontaneous emission; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034318

Filename

1034318