Title :
A 2 V 2.4 GHz fully integrated CMOS LNA with Q-enhancement circuit
Author :
Huang, J.C. ; Weng, Ro-Min ; Hsiao, Chih-Lung ; Lin, Kun-Yi
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Abstract :
A 2 V 2.4 GHz ISM (Industrial Scientific and Medical) frequency band LNA (Low Noise Amplifier) with negative resistance is proposed. The LNA is designed with 0.35 μm process. The noise figure including the resistance of inductors has been considered. An inductor is added between the MOS of cascode circuits to improve the matching and increase power gain. Using negative resistance reduces output parasitic resistance of spiral inductor
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; impedance matching; inductors; integrated circuit noise; negative resistance circuits; 0.35 micron; 2 V; 2.4 GHz; CMOS LNA; ISM; Q-enhancement circuit; cascode circuits; matching; negative resistance; noise figure; output parasitic resistance; power gain; spiral inductor; Electric resistance; Gallium arsenide; Immune system; Inductors; MOSFET circuits; Noise generators; Q factor; Radio frequency; Radiofrequency integrated circuits; Spirals;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985293
