DocumentCode :
2274671
Title :
Process match between DSA and LSA for ultra-shallow junction formation
Author :
Yonggen He ; Wu, Bing ; Yu, Guobin ; Chen, Yong ; Liu, Hailong ; Lu, Wei ; Wu, Jingang ; Zhang, David Wei ; Wang, Chenyu ; Tang, Ji Yue ; Zhao, Ganming
Author_Institution :
Sch. of Microelectron., Fudan Univ., Shanghai, China
fYear :
2012
fDate :
14-15 May 2012
Firstpage :
77
Lastpage :
80
Abstract :
Laser anneal (LA) is one of major millisecond anneal techniques (MSA) for forming ultra-shallow and highly activated junctions. There are two major commercially available laser anneal systems which are called laser spike annealing (LSA) and dynamic surface annealing (DSA) respectively. LSA and DSA are quite different in terms of laser source, wavelength, scanning mode and so on, their hardware and process specifications are definitely distinct from each other. In this work, the process match between DSA and LSA for ultra-shallow junction formation was studied using implanted blanket wafers as well as 45nm logic device wafers. It was found that through some process tuning knobs adjustments, such as peak temperature, dwell time, DSA can match LSA thermal budget well.
Keywords :
laser beam annealing; semiconductor lasers; semiconductor technology; CMOS device scaling down; DSA; LSA thermal budget; dynamic surface annealing; hardware specifications; high activated junction; implanted blanket wafers; laser anneal systems; laser source; laser spike annealing; process match; size 45 nm; ultrashallow junction formation; Abstracts; Annealing; Current measurement; Fabrication; Heating; ISO standards; Roads;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
Type :
conf
DOI :
10.1109/IWJT.2012.6212814
Filename :
6212814
Link To Document :
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