Phosphorous transient enhanced diffusion suppression with cluster carbon co-implantation at low temperature

Low temperature cluster carbon co-implantation was applied for phosphorous activation enhancement and transient enhanced diffusion (TED) suppression. The dependence of phosphorous activation and TED on 1) carbon energy, 2) dose and 3) substrate temperature have been investigated. 1) Implanted carbon depth compared with phosphorous depth was optimized for better phosphorous TED suppression and phosphorous activation. 2) Junction depth and sheet resistance (Rs) were evaluated as a function of carbon dose. 3) Amorphous layer thickness was controlled by cooling down the substrate temperature and the influence on TED and activation was evaluated. Finally shallow junction with low Rs has been achieved using low temperature cluster carbon co-implantation.