Title :
Non-Volatile Memory Concepts Based on Resistive Switching
Author_Institution :
RWTH Aachen Univ., Aachen
Abstract :
A wide spectrum of resistively switching metal-insulator-metal systems has been proposed for future non-volatile memory applications. This paper attempts a classification of the phenomena and the conceivable microscopic mechanism.
Keywords :
MIM devices; random-access storage; switching; metal-insulator-metal systems; microscopic mechanism; nonvolatile memory; resistive switching; Conducting materials; Electric resistance; Electrodes; Electrons; Metal-insulator structures; Nonvolatile memory; Phase change materials; Random access memory; Thermal resistance; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393162
