Qbit/s modulation characteristics of single and multimode VCSELs-Numerical simulations and experiments

Author

Gustavsson, J.S. ; Haglund, A. ; Bengtsson, D. ; Larsson, A.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2002

fDate

24-24 May 2002

Firstpage

583

Abstract

Summary from only given. We have studied single and multimode oxide confined VCSELs with emission wavelength 850 nm at 10 Gbit/s current modulation. The VCSEL structure is schematically shown. Simulations have been performed using a new comprehensive model, which includes the detailed geometry and layer structure and takes into account the effects of carrier density and temperature on the dynamic evolution of the optical field distributions.

Keywords

carrier density; electro-optical modulation; laser modes; semiconductor device models; semiconductor lasers; surface emitting lasers; 10 Gbit/s; 850 nm; Gbit/s current modulation; carrier density; carrier temperature; dynamic evolution; emission wavelength; geometry; layer structure; multimode oxide confined VCSELs; optical field distributions; quasi-3D model; single mode oxide confined VCSELs; spontaneous emission noise; Diffraction gratings; Distributed Bragg reflectors; High speed optical techniques; Laser modes; Optical modulation; Optical noise; Optical surface waves; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034353

Filename

1034353