Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation

Author

Hinkle, Christopher ; Chan, Jack ; Mendez, Javier ; Chapman, Richard ; Vogel, Eric ; Riley, Deborah ; Jain, Amitabh ; Song, S.C. ; Lim, K.Y. ; Blatchford, James ; Shaw, Judy

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX, USA

fYear

2012

fDate

14-15 May 2012

Firstpage

198

Lastpage

202

Abstract

Contact resistance (R_c) contributes over 65% of the total source to drain series resistance in <; 32 nm CMOS technologies. In this work, reduction of R_c is achieved by lowering the SBH through the incorporation of new materials into NiPtSi. The impact of implanted elemental species as well as alloyed low work function metals is discussed. As diffusion and subsequent interface composition is highly dependent on the incorporated material, these NiPtSi junctions with complex composition are often inhomogeneous, making SBH extraction a less trivial task. Advanced analysis for extracting the true SBH of these junctions will also be presented.

Keywords

Schottky barriers; contact resistance; nickel alloys; platinum alloys; silicon alloys; work function; CMOS technologies; NiPtSi; Schottky barriers; contact resistance; drain series resistance; implanted elemental species; interface composition; low work function metals; materials incorporation; Abstracts; Alloying; Annealing; Physics; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2012 12th International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4673-1258-5

Electronic_ISBN

978-1-4673-1256-1

Type

conf

DOI

10.1109/IWJT.2012.6212840

Filename

6212840