DocumentCode
2275587
Title
Hall resistance plateaus in high quality graphene samples at large currents: Toward quantization tests
Author
Bennaceur, K. ; Guignard, J. ; Schopfer, F. ; Poirier, W. ; Glattli, D.C.
Author_Institution
Service de Phys. de l´´Etat Condense, CEA Saclay, Gif-sur-Yvette
fYear
2008
fDate
8-13 June 2008
Firstpage
14
Lastpage
15
Abstract
Graphene Hall bars prepared from exfoliated natural graphite of large size and high quality have been measured in the quantum Hall effect regime. The monolayer Graphene sheet shows Hall quantization robust upon applying very large current. Low longitudinal resistance is found up to 10 muA with finite width h/2e2 Hall plateau at 4.2 K and 16 T. The TiAu/Graphene contact resistance is found low, typically 20 Omega to 50 Omega. The results strongly indicate that Graphene is a promising new material for quantum metrology.
Keywords
contact resistance; gold alloys; graphene; monolayers; quantum Hall effect; titanium alloys; Hall resistance plateaus; TiAu-C; TiAu-graphene contact resistance; graphene Hall bar preparation; high quality graphene samples; magnetic flux density 16 T; monolayer; quantization tests; quantum Hall effect; quantum metrology; resistance 20 ohm to 50 ohm; temperature 4.2 K; Contact resistance; Doping; Electrical resistance measurement; Electrons; Magnetic flux density; Quantization; Robustness; Temperature; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location
Broomfield, CO
Print_ISBN
978-1-4244-2399-6
Electronic_ISBN
978-1-4244-2400-9
Type
conf
DOI
10.1109/CPEM.2008.4574629
Filename
4574629
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