DocumentCode :
2276046
Title :
Si based highly luminescent photonic structures
Author :
Heitmann, J. ; Yi, L. ; Scholz, R. ; Zacharias, M.
Author_Institution :
Max-Planck Inst. fur Mikrostrukturphysik, Halle, Germany
fYear :
2002
fDate :
24-24 May 2002
Abstract :
Summary form only given. Nanoscaled structures play a major role in optoelectronic and semiconductor research with many applications already in a commercial state. Today´s Si nanocrystals research is focused on the preparation of Si nanocrystals embedded in an oxide host. Methods applied for preparation are Si ion implantation into high quality oxides, sputtering of Si rich oxides or reactive evaporation of Si rich oxides. Using these methods the Si crystal size is controlled by the Si content in the SiO/sub 2/ matrix. Crystal size and number cannot be controlled independently. in addition, there is only a limited control of the size distribution. We present a new process that allows the size controlled preparation of silicon nanocrystals on 4 inch wafers.
Keywords :
ion implantation; micro-optics; nanostructured materials; nanotechnology; optical fabrication; photoluminescence; photonic crystals; silicon; 4 inch; Si; Si based highly luminescent photonic structures; Si content; Si ion implantation; Si nanocrystals; Si rich oxides; SiO/sub 2/; commercial state; crystal size; high quality oxides; nanocrystal density; nanoscaled structures; oxide host; reactive evaporation; semiconductor research; silicon nanocrystals; size controlled preparation; sputtering; Crystallization; Ion implantation; Nanocrystals; Optical filters; Optical waveguides; Photonic crystals; Physics; Silicon; Size control; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
Type :
conf
DOI :
10.1109/CLEO.2002.1034396
Filename :
1034396
Link To Document :
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