Modeling of internal transparent collector IGBTs and the extraction of electron lifetime in nano-voids layer

Author

Hu, D.Q. ; Wu, Y. ; Kang, B.W. ; Jia, Y.P. ; Sin, Johnny K O

Author_Institution

Dept. of Electron. Sci. & Tech., Beijing Univ. of Technol., Beijing, China

fYear

2009

fDate

20-24 Sept. 2009

Firstpage

3948

Lastpage

3953

Abstract

A new type of insulated gate bipolar transistor (IGBT)-internal transparent collector (ITC) IGBT is proposed. It is quite similar to that of the PT-IGBT, but a very low carrier lifetime control region is introduced in the P+ substrate near the p-collector/n-buffer junction. Based on quasi-static hypothesis, the ITC-IGBTs´ static characteristic equations are given. The turn-off equations are also derived on base of non-quasi-static analysis. The model is used to our fabricated device structure and the results fit well to the experiment results. Based on the relationship of Von and local carrier lifetime, electron lifetime in carrier lifetime control region is deduced. They are at range of 0.2-30 nanoseconds. The static performance as well as turn-off loses of ITC-IGBT is compared to PT- and FS-IGBT. The ITC-IGBT shows good potential for 600V IGBT applications.

Keywords

insulated gate bipolar transistors; IGBT application; carrier lifetime control region; electron lifetime; fabricated device structure; insulated gate bipolar transistor; internal transparent collector; local carrier lifetime; nano-voids layer; quasi-static hypothesis; substrate; time 0.2 ns to 30 ns; turn-off equation; voltage 600 V; IGBT; transparent collector;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2893-9

Electronic_ISBN

978-1-4244-2893-9

Type

conf

DOI

10.1109/ECCE.2009.5316183

Filename

5316183