Calibrated scanning spreading resistance microscope (SSRM) on buried-heterostructure multiple-quantum-well lasers: probing individual quantum wells and free carrier concentrations

Author

Ban, D. ; Sargent, E.H. ; Dixon-Warren, S.J. ; Grevatt, T. ; Knight, G. ; Pakulski, G. ; Spring Thorpe, A.J. ; Streater, R. ; White, J.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

2002

fDate

24-24 May 2002

Firstpage

631

Abstract

Summary form only given. We report the results of calibrated high-spatial-resolution SSRM measurement, showing that we are able to resolve individual quantum wells and determine the activated doping of the p-n-p-n thyristor current blocking layers of a BH MQW laser.

Keywords

calibration; laser variables measurement; quantum well lasers; scanning probe microscopy; semiconductor device measurement; thyristors; BH MQW laser; activated doping; buried-heterostructure multiple-quantum-well lasers; calibrated scanning spreading resistance microscopy; free carrier concentration; high-spatial-resolution SSRM measurement; p-n-p-n thyristor current blocking layers; Atomic force microscopy; Atomic measurements; Chemical lasers; Current measurement; Dark current; Detectors; Quantum well devices; Quantum well lasers; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034410

Filename

1034410