DocumentCode :
2276792
Title :
Improving eco-efficiency via elimination of greenhouse gases from semiconductor dry cleaning processes
Author :
Oh, C.H. ; Ko, S.J. ; Shin, D.K. ; Jeong, Y.Y.
Author_Institution :
ESH R&D Center, Sk Hynix Semicond. Inc., Icheon, South Korea
fYear :
2012
fDate :
15-17 May 2012
Firstpage :
257
Lastpage :
260
Abstract :
For each device sk Hynix produces, an eco-efficiency indicator is calculated which takes into account both the product value (performance, power consumption etc) and its environmental influence (material consumption, global warming emissions and regulation compliance). To reduce the environmental influence, a detailed analysis of the contribution of each gas used during manufacturing was carried out which identified NF3 as contributing almost 50% of the total process gas used (by weight), with the majority of this used for dry cleaning. In this study, sk Hynix has evaluated on-site generated F2 from Linde as an alternative cleaning gas to NF3 for our 300mm process line. F2 has been used for cleaning 300mm batch type LPCVD process tools since 2003 and we now study 2 single wafer PECVD process tools for different processes. When F2 was used for PECVD chamber cleaning, the etch rate was increased by up to a factor of 2. There was also greater process chamber temperature stability which meant that post clean conditioning could be significantly shortened even without clean recipe optimization giving a reduction in total non-productive time of around 40%. RPS plasma power consumption is reduced by up to 50% and there are also significant reductions in the mass of gas required. Thermal cleaning with F2 was also demonstrated.
Keywords :
air pollution control; chemical vapour deposition; laundering; power consumption; semiconductor device manufacture; Linde; NF3 gas; RPS plasma power consumption; batch type LPCVD process tool; eco-efficiency indicator; environmental influence; global warming emission; greenhouse gas elimination; low-pressure chemical vapor deposition; material consumption; performance value; plasma-enhanced chemical vapor deposition; post clean conditioning; power consumption value; process chamber temperature stability; regulation compliance; semiconductor dry cleaning process; single wafer PECVD process tool; size 300 mm; sk Hynix; thermal cleaning; Atomic measurements; Cleaning; Films; Global warming; Optimization; Plasma temperature; Silicon; 300mm; Fluorine; chamber cleaning; environmental effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-4673-0350-7
Type :
conf
DOI :
10.1109/ASMC.2012.6212907
Filename :
6212907
Link To Document :
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