Title :
Characterization of MOCVD-grown InNAs/GaAs quantum wells
Author :
Hongjun Cao ; Nuntawong, N. ; El-Emawy, A.-R.A. ; Osinski, M.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; gallium arsenide; indium compounds; interface structure; semiconductor growth; semiconductor quantum wells; stoichiometry; vapour phase epitaxial growth; InNAs-GaAs; MOCVD growth; MOCVD-grown InNAs/GaAs quantum wells; composition; crystalline quality; dimethylhydrazine; high-resolution X-ray diffraction; thickness; Absorption; Aluminum gallium nitride; Electrons; Gallium arsenide; Gallium nitride; Lattices; MOCVD; Nitrogen; Plasma materials processing; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034440
