Thermal modeling of multi-gate field effect transistors based on a reduced order model

A dynamic reduced-order thermal model based on proper orthogonal decomposition (POD) is presented and applied to semiconductor structures, including a multi-fin multi-gate field effective transistor (MuGFET) structure with metal contacts and metal/poly wires. It is shown that the dynamic POD models generated under the conditions of synchronized power pulses are able to respond to unsynchronized pulses with shifts in time. It has been demonstrated that the accurate POD model offers thermal solution as detailed as direct numerical simulation (DNS) and is able to reduce numerical degrees of freedom by 5 to 6 orders of magnitude.