Thermal transient analysis of semiconductor device degradation in power cycling reliability tests with variable control strategies

Author

Sarkany, Zoltan ; Vass-Varnai, Andras ; Laky, S. ; Rencz, Marta

Author_Institution

Mentor Graphics Corp., Budapest, Hungary

fYear

2014

fDate

9-13 March 2014

Firstpage

236

Lastpage

241

Abstract

In this article we investigate the different failure mechanisms in IGBT modules as a result of power cycling tests. The power cycling is carried out with different control strategies, such as constant current load, constant power and constant junction temperature. With the continuous monitoring of the tested device voltage, junction temperatures and periodic thermal transient tests, the crack of the wire bonds or even degradation of the die attach layer can be identified. A comparison between the effects of the studied control strategies on the lifetime of the tested device is also presented.

Keywords

semiconductor device reliability; semiconductor device testing; IGBT modules; current load; device voltage; die attach layer; failure mechanisms; junction temperature; periodic thermal transient tests; power cycling reliability tests; semiconductor device degradation; variable control strategies; wire bonds; Current measurement; Degradation; Heating; Insulated gate bipolar transistors; Semiconductor device measurement; Temperature measurement; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2014 30th Annual

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/SEMI-THERM.2014.6892246

Filename

6892246