DocumentCode
2277007
Title
A novel approach to optical wafer pre-alignment using innovative ranging edge detectors
Author
Jerman, T. ; Priewald, R.H. ; Leitgeb, W.
Author_Institution
R&D of Opt. Syst., BRS (Bright Red Syst.), Graz, Austria
fYear
2012
fDate
15-17 May 2012
Firstpage
311
Lastpage
314
Abstract
This work describes a novel approach to improving accuracy of optical wafer pre-align systems especially for thin, warped, bonded or carrierless-ultrathin wafers. Using 3D wafer modeling, provided by innovative Ranging Edge Detectors (RED, RE-Detector), the proposed signal processing enables maximum likelihood parameter estimation for best wafer alignment results. Additionally the sensor principle of an RE-Detector enables accurate detection of transparent substrates like sapphire (Al2O3), silicon carbide (SiC) or evec glass wafers. This paper describes how wafer pre-alignment has been modified for thin wafer handling with RED pee-alignment resulting in significantly better position accuracy, less wafer damage and cost reduction.
Keywords
edge detection; elemental semiconductors; maximum likelihood estimation; semiconductor technology; silicon; solid modelling; wafer-scale integration; 3D wafer modeling; RE-detector; carrierless-ultrathin wafers; cost reduction; evec glass wafers; innovative ranging edge detectors; maximum likelihood parameter estimation; optical wafer prealignment system; sapphire; signal processing; silicon carbide; transparent substrate detection; wafer handling; Detectors; Estimation; Image edge detection; Mathematical model; Radio frequency; Semiconductor device modeling; Three dimensional displays; 3D wafer model; Ranging Edge Detector; thin wafer; two-dimensional edge detection; warpage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location
Saratoga Springs, NY
ISSN
1078-8743
Print_ISBN
978-1-4673-0350-7
Type
conf
DOI
10.1109/ASMC.2012.6212918
Filename
6212918
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