Title :
E-beam inspection for detection of sub-design rule physical defects
Author :
Patterson, Oliver D. ; Lee, Julie ; Lei, Chris ; Salvador, Dave
Author_Institution :
Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
Abstract :
E-beam inspection provides a complementary approach to brightfield inspection for detection of otherwise difficult to detect physical defects. Advantages of E-beam inspection include superior resolution, the ability to classify defects using patch images and automatic filtering of prior level defects. A key limitation, however, is throughput. Therefore brightfield inspection should always be used for defection of physical defects when effective. For challenging defects, E-beam inspection data may be used as a gold standard for development of the best optical inspection conditions. For very challenging defects, it may be necessary to rely on E-beam inspection. An efficient inspection should be developed. Three examples are presented of challenging defects to illustrate the usefulness of E-beam inspection for physical defect detection.
Keywords :
electron beam effects; filtering theory; inspection; semiconductor technology; automatic prior level defects filtering; brightfield inspection; defects classification; e-beam inspection; gold standard; optical inspection conditions; patch images; sub-design rule physical defects detection; superior resolution; Gold; Image resolution; Inspection; Logic gates; Merging; Standards; E-beam inspection; gold standard methodology; high resolution inspection; physical defect detection;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-0350-7
DOI :
10.1109/ASMC.2012.6212932