DocumentCode :
2277595
Title :
Indexing the actual condition of GIS at the component level, bay level, and the GIS level
Author :
Al-Suhaily, Muhannad ; Meijer, Sander ; Smit, Johan J. ; Sibbald, Peter
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
fYear :
2012
fDate :
17-20 Sept. 2012
Firstpage :
536
Lastpage :
540
Abstract :
Indicating the actual condition of the High voltage Gas Insulated Substations (GIS) and its components is a very helpful tool to the asset manager. It gives indication if a failure would occur and hence, give the possibility to prevent it by igniting the suitable maintenance action. For this purpose, three indicators are used to express the condition of the GIS. These are Good, Fair, and Poor. These three condition indicators are used to indicate the condition of the GIS at three different levels, namely: The component level, at this level the GIS components is distinguished and their actual condition is indicated. The GIS components are for instant, the switching components, measuring transformers, and surge arresters . The bay level, at this level the actual condition of the busbar system and the different type bays in GIS are indicated . The GIS level is the highest level, in this level the condition of the GIS substation as one unit is indicated This division of the GIS substation into three levels gives the asset manager the possibility to identify the condition of the asset as one unit i.e. at the GIS level and at a detail ed level i.e. the components level.
Keywords :
arresters; gas insulated substations; maintenance engineering; power transformers; GIS level; asset manager; bay level; component level; high voltage gas insulated substation; maintenance action; surge arrester; switching component; transformer measurement; Conferences; Gas insulation; Logic gates; Maintenance engineering; Market research; Reliability; Substations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Voltage Engineering and Application (ICHVE), 2012 International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-4747-1
Type :
conf
DOI :
10.1109/ICHVE.2012.6357090
Filename :
6357090
Link To Document :
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