Ensemble Monte Carlo/molecular dynamics simulation of inversion layer mobility in Si MOSFETs - effects of substrate impurity

Author

Kamakura, Yoshinari ; Ryouke, Hironori ; Taniguçhi, Kenji

Author_Institution

Dept. of Electron. & Inf. Syst., Osaka Univ., Japan

fYear

2002

fDate

2002

Firstpage

25

Lastpage

28

Abstract

Electron transport in bulk Si and MOSFET inversion layers is studied using an ensemble Monte Carlo (EMC) technique coupled with the molecular dynamics (MD) method. The Coulomb interactions among point charges (electrons and negative ions) are directly taken into account in the simulation. It is demonstrated that the static screening of Coulomb interactions is correctly simulated by the EMC/MD method. Furthermore, we calculate the inversion layer mobility in Si MOSFETs, and mobility roll-off near the threshold voltage is observed by the present approach.

Keywords

MOSFET; Monte Carlo methods; carrier mobility; elemental semiconductors; inversion layers; molecular dynamics method; semiconductor device models; silicon; Coulomb interactions; MOSFET inversion layers; Si; ensemble Monte Carlo technique; mobility roll-off; molecular dynamics method; point charges; static screening; substrate impurity; threshold voltage; Electromagnetic compatibility; Electron mobility; FETs; Impurities; Information systems; MOSFETs; Monte Carlo methods; Particle scattering; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Print_ISBN

4-89114-027-5

Type

conf

DOI

10.1109/SISPAD.2002.1034508

Filename

1034508