• DocumentCode
    2277995
  • Title

    A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications

  • Author

    Ouyang, Qiqing Christine ; Koester, Steven J. ; Chu, Jack O. ; Grill, Alfred ; Subbanna, Seshadri ; Hennan, D.A.

  • Author_Institution
    IBM T. J. Watson Research Center
  • fYear
    2002
  • fDate
    4-6 Sept. 2002
  • Firstpage
    59
  • Lastpage
    62
  • Abstract
    2-dimensional (2-D) device simulations have been performed to study the scaling of strained-Si/SiGe nMODFETs. Device fabrication has been conducted to verify the simulation results. It is found that lateral scaling alone cannot improve the device performance. In order to achieve high speed (fT > 300 GHz), acceptable voltage gain (> 10) and good turnoff characteristics (> 1000) for RF applications, vertical scaling of the layer structure and source/drain junctions is also required. Preliminary experimental results support the scaling theory.
  • Keywords
    CMOS technology; Epitaxial layers; Germanium silicon alloys; HEMTs; MODFETs; Medical simulation; Radio frequency; Silicon germanium; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
  • Conference_Location
    Kobe, Japan
  • Print_ISBN
    4-89114-027-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2002.1034516
  • Filename
    1034516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2277995