3D MOSFET simulation considering long-range Coulomb potential effects for analyzing statistical dopant-induced fluctuations associated with atomistic process simulator

Author

Ezaki, Tatsuya ; Ikezawa, T. ; Notsu, Akio ; Tanaka, Katsuhiko ; Hane, M.

Author_Institution

Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

2002

fDate

2002

Firstpage

91

Lastpage

94

Abstract

We have developed a realistic 3-D process/device simulation method for investigating the fluctuation in device characteristics induced by the statistical nature of the number and position of discrete dopant atoms. We used it to investigate the variations in characteristics of a sub-100 nm CMOS device induced by realistic dopant fluctuations considering practical device fabrication processes. In particular, sensitivity analysis of the threshold voltage fluctuation was performed in terms of the independent dopant contribution, such as that of the dopant in the source/drain region or channel region.

Keywords

CMOS integrated circuits; MOSFET; doping profiles; fluctuations; semiconductor device models; 3D MOSFET simulation; CMOS device; atomistic process simulator; channel region; device characteristics; discrete dopant atoms; dopant fluctuations; independent dopant contribution; long-range Coulomb potential effects; sensitivity analysis; source/drain region; statistical dopant-induced fluctuations; threshold voltage fluctuation; Analytical models; Atomic layer deposition; CMOS process; Convergence; Fluctuations; Impurities; Lakes; MOSFET circuits; Predictive models; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Print_ISBN

4-89114-027-5

Type

conf

DOI

10.1109/SISPAD.2002.1034524

Filename

1034524