Title :
Realization of a robust single-parameter quantized charge pump
Author :
Kaestner, B. ; Kashcheyevs, V. ; Pierz, K. ; Siegner, U. ; Schumacher, H.W.
Author_Institution :
Phys.-Tech. Bundesanstalt, Braunschweig
Abstract :
This paper describes a novel scheme for quantized charge pumping based on single-parameter modulation. The device is realized in an AlGaAs-GaAs gated nanowire. A particular advantage of this realization is that operation in the quantized regime can be achieved in a potentially large range of amplitude and dc off-set of the driving signal. This feature together with the simple configuration might enable large scale parallel operation of many such devices.
Keywords :
III-V semiconductors; aluminium compounds; charge pump circuits; gallium arsenide; nanowires; semiconductor quantum wires; AlGaAs-GaAs; dc off-set; driving signal; gated nanowire; large scale parallel operation; quantized charge pumping; single-parameter modulation; Charge pumps; Electrons; Frequency; Physics; Potential energy; Quantum dots; Robustness; Solid state circuits; Tunneling; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
DOI :
10.1109/CPEM.2008.4574764