Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model

Anomalous output characteristics are observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not observed in drift-diffusion simulations and its occurrence in measurements is questionable. An explanation of the cause of this effect is given, and a solution is proposed by modifying the hydrodynamic transport model. Successful simulations of different SOI Devices including a "Well Tempered" SOI MOSFET are presented.