Title :
Statistical fluctuation analysis by Monte Carlo ion implantation method
Author :
Oda, Yoshinori ; Ohkura, Yasuyuki ; Suzuki, Kaka ; Ito, Sanae ; Amakawa, Hirotaka ; Nishi, Kenji
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
Abstract :
This paper shows a new statistical fluctuation analysis method by Monte Carlo ion implantation and investigates Vt fluctuations due to statistical variation of dopant profile by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFETs efficiently.
Keywords :
MOSFET; Monte Carlo methods; fluctuations; ion implantation; semiconductor device models; semiconductor doping; 100 nm; Monte Carlo ion implantation method; Vt fluctuations; dopant profile variation; statistical fluctuation analysis; sub-100 nm MOSFETs; Analytical models; Computational modeling; Doping profiles; Fluctuations; Implants; Ion implantation; MOSFETs; Monte Carlo methods; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034551
