• DocumentCode
    2278769
  • Title

    Modeling of the diffusion of implanted boron in strained Si/Si1-xGex

  • Author

    Zhu, Huilong ; Lee, Kam-Leung ; Dokumaci, O. ; Ronsheim, P. ; Cardone, F. ; Hegde, S. ; Mantz, U. ; Saunders, P.

  • Author_Institution
    Microelectron. Div., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    221
  • Lastpage
    224
  • Abstract
    The diffusion of implanted boron in strained Si/Si1-xGex is investigated. A continuum segregation model (CSM) is presented to describe the phenomenon of B pile-up into the germanium profile. An analytic formula is obtained for Ge pre-amorphization and a modified pre-amorphization model is used in TSUPREM4 in order to accurately model our measurement data. Our simulations of boron diffusion are in reasonable agreement with our SIMS data. Comparison of the CSM with the model of immobile boron-germanium clusters is also discussed.
  • Keywords
    Ge-Si alloys; amorphisation; boron; diffusion; elemental semiconductors; internal stresses; segregation; semiconductor junctions; semiconductor materials; silicon; B pile-up; CSM; Ge pre-amorphization; SIMS; Si-SiGe:B; TSUPREM4; continuum segregation model; diffusion; immobile boron-germanium clusters; implanted boron; pre-amorphization model; strained Si/Si1-xGex; Annealing; Boron; Germanium silicon alloys; Heterojunction bipolar transistors; Potential energy; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
  • Print_ISBN
    4-89114-027-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2002.1034557
  • Filename
    1034557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2278769