Title :
Quantum transport modeling in nano-scale devices
Author :
Ogawa, Matsuto ; Tsuchiya, Hideaki ; Miyoshi, Tanroh
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
We present results and describe progress we have made in the development of our quantum transport modeling for nanoscale devices. Our simulation is based upon either the nonequilibrium Green´s function method (NEGF) or the quantum correction (QC) associated with the density gradient method (DG) and/or the effective potential method (EP). We show the results of our modeling methods applied to several devices and discuss issues faced with regards to computational time, open boundary conditions, and their relationship to self-consistent solution of the Poisson-NEGF equations. We also discuss those for efficiently tailored QC Monte Carlo techniques.
Keywords :
Green´s function methods; MIS devices; MOSFET; Monte Carlo methods; Poisson equation; SCF calculations; digital simulation; electronic engineering computing; nanoelectronics; resonant tunnelling diodes; semiconductor device models; tight-binding calculations; MOS diode; Monte Carlo techniques; Poisson-NEGF equations; RTD; computational time; density gradient method; double-gated MOSFET; effective potential method; efficient semiclassical approach; empirical sp3s* nearest neighbor tight-binding model; evanescent-wave-mode-matching method; gate leakage current; integrated circuits; nanoscale devices; nonequilibrium Green´s function method; nonparabolicity effects; open boundary conditions; predictive simulation tools; quantum correction; quantum effects; quantum transport modeling; resonant tunneling diode; self-consistent solution; semiconductor device; valley mixing effects; Analytical models; Atomic layer deposition; Diodes; Electrons; Green´s function methods; Integrated circuit modeling; MOSFETs; Nanoscale devices; Quantum mechanics; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034568
