DocumentCode
2279641
Title
Static and dynamic behaviour of paralleled IGBTs
Author
Letor, Romeo
Author_Institution
SGS-Thomson Microelectron., Catania, Italy
fYear
1990
fDate
7-12 Oct. 1990
Firstpage
1604
Abstract
The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<>
Keywords
heat sinks; insulated gate bipolar transistors; switching; IGBT; current balance; drive circuit; dynamic behaviour; heat sink mounting; parallel insulated-gate bipolar transistors; static behaviour; switching behavior; thermal stability; Circuit stability; Insulated gate bipolar transistors; Microelectronics; Packaging; Power engineering and energy; Switching loss; Temperature; Thermal engineering; Thermal loading; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location
Seattle, WA, USA
Print_ISBN
0-87942-553-9
Type
conf
DOI
10.1109/IAS.1990.152401
Filename
152401
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