Title :
A new design of voltage controlled dielectric resonator oscillator using three-terminal MESFET varactor
Author :
Lee, Joo Yeol ; Hong, UISeok
Author_Institution :
Dept. of Electron. & Commun. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
The MESFET can be used as a three-terminal MESFET varactor by employing the gate depletion capacitance Cg. A new VCDRO (voltage controlled dielectric 0.0 resonator oscillator) is designed to apply VCDRO with this concept. The VCDRO produced 10.17 dBm output power at a frequency of 11.00 GHz and tuning bandwidth of 70.2 MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET play both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device
Keywords :
MESFET circuits; capacitance; circuit tuning; dielectric resonator oscillators; microwave oscillators; varactors; variable-frequency oscillators; voltage-controlled oscillators; 11 GHz; 70.2 MHz; PLL oscillator; SHF; VCDRO; active device; circuit configuration; circuit fabrication; digital microwave communication systems; equivalent impedance; frequency; gate depletion capacitance; imaginary parts; output power; real parts; three-terminal MESFET varactor; tuning bandwidth; voltage controlled dielectric resonator oscillator; Capacitance; Circuit optimization; Dielectrics; Frequency; MESFET circuits; Power generation; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Singapore ICCS '94. Conference Proceedings.
Print_ISBN :
0-7803-2046-8
DOI :
10.1109/ICCS.1994.474065